GAS-PHASE AND SURFACE-REACTIONS IN THE MOCVD OF GAAS FROM TRIETHYLGALLIUM, TRIMETHYLGALLIUM, AND TERTIARYBUTYLARSINE

被引:32
作者
OMSTEAD, TR [1 ]
VANSICKLE, PM [1 ]
LEE, PW [1 ]
JENSEN, KF [1 ]
机构
[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455
关键词
The authorsa re gratefult o the NationalS ci-ence Foundationfo r support of this work and would like to thank Kevin Sieferinga nd Dr. Mountziarisfo r helpfuld iscussions;
D O I
10.1016/0022-0248(88)90500-3
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
16
引用
收藏
页码:20 / 28
页数:9
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