A STUDY OF THE STRUCTURAL AND ELECTRONIC-PROPERTIES OF MAGNETRON SPUTTERED TIN OXIDE-FILMS

被引:41
作者
DE, A
RAY, S
机构
[1] Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur Calcutta
关键词
D O I
10.1088/0022-3727/24/5/014
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tin oxide (SnO(x)) films have been deposited using a RF magnetron sputtering technique from a hot pressed SnO2 target in an ambient mixture of argon and oxygen. Depending on the deposition parameters the structure of the films may be varied from amorphous to crystalline along with a consequent decrease in resistivity. An attempt has been made to understand the causes of formation of insulating and conducting films. By optimizing the oxygen partial pressure and substrate temperature, SnO(x) films of resistivity 6.1 x 10(-3) OMEGA cm with a corresponding optical transmission approximately 95% and direct optical gap of 4.13 eV can be prepared. For films having a relatively high conductivity, a long exposure to the atmosphere changed their electronic properties which could be partially recovered by annealing. The effect of annealing SnO(x) films in different ambients was studied.
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页码:719 / 726
页数:8
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