HYDROSTATIC-PRESSURE STUDIES OF THIN-BARRIER RESONANT-TUNNELING DIODES

被引：9

作者：

DINIZ, R

SMOLINER, J

GORNIK, E

MEINERS, U

BRUGGER, H

WISNIEWSKI, P

SUSKI, T

机构：

[1] DAIMLER BENZ RES CTR,W-7900 ULM,GERMANY

[2] UNIPRESS,PL-01142 WARSAW,POLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1993年 / 8卷 / 07期

关键词：

D O I：

10.1088/0268-1242/8/7/026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnelling processes in thin double-barrier GaAs/AlAs diodes have been studied under hydrostatic pressure. GAMMA-X tunnelling strongly influences the current-voltage (I-V) characteristics of samples having barriers ten monolayers thick. Non-resonant tunnelling through transverse X valleys predominates at T = 300 K, whereas at low temperature it proceeds by longitudinal X valleys. Indirect GAMMA-X tunnelling is found to be inversely proportional to barrier thickness. The I-V characteristics of samples having barriers six and five monolayers thick are controlled by elastic GAMMA-GAMMA tunnelling. It is shown that extremely thin barrier thicknesses do not necessarily imply better electrical features.

引用

页码：1352 / 1356

页数：5

共 22 条

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