学术探索
学术期刊
新闻热点
数据分析
智能评审

RAMAN-SPECTRUM OF A ZNSE/GAAS HETEROSTRUCTURE

被引：13
作者：
WALSH, D
MAZURUK, K
BENZAQUEN, M
机构：
来源：
PHYSICAL REVIEW B | 1987年 / 36卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.36.2883
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2883 / 2885
页数：3
相关论文
共 17 条
[11]   ELECTRONIC RAMAN-SCATTERING AND INFRARED-ABSORPTION BY ARSENIC ACCEPTORS IN ZNTE [J].
NAKASHIMA, S ;
KOJIMA, H ;
HATTORI, T .
SOLID STATE COMMUNICATIONS, 1975, 17 (06) :689-692
[12]   PHOTO-LUMINESCENCE OF IRON-DOPED KMGF3 [J].
POIRIER, A ;
WALSH, D .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (13) :2619-2624
[13]   GROWTH AND DOPING OF ZNSE AND ZNSXSE1-X BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J].
STUTIUS, W .
JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) :1-9
[14]  
WALSH D, IN PRESS APPL PHYS L
[15]   ELECTRONIC RAMAN-SPECTRA OF SHALLOW ACCEPTORS IN SEMI-INSULATING GAAS [J].
WAN, K ;
BRAY, R .
PHYSICAL REVIEW B, 1985, 32 (08) :5265-5274
[16]  
WRIGHT GB, 1968, P 9 INT C PHYS SEM M, P1067
[17]   PHOTOLUMINESCENCE PROPERTIES OF ZNSE SINGLE CRYSTALLINE FILMS GROWN BY ATOMIC LAYER EPITAXY [J].
YAO, T ;
TAKEDA, T ;
WATANUKI, R .
APPLIED PHYSICS LETTERS, 1986, 48 (23) :1615-1616
12