ELECTRONIC-PROPERTIES OF HG1-X-YCDXZNYTE

被引：11

作者：

EKPENUMA, SN

MYLES, CW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.576096

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：321 / 325

页数：5

共 22 条

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[15] EFFECT OF ALLOY DISORDER ON DEEP LEVELS IN HG1-XCDXTE [J].

MYLES, CW ;

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[16] IDENTIFICATION OF DEFECT CENTERS IN HG1-XCDXTE USING THEIR ENERGY-LEVEL COMPOSITION DEPENDENCE [J].

MYLES, CW ;

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BYLANDER, EG .

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[17] CHARGE STATE SPLITTINGS OF DEEP LEVELS IN HG1-XCDX TE [J].

MYLES, CW .

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[18] EVIDENCE FOR BOND STRENGTHENING IN CD1-XZNXTE(X=0.04) [J].

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[19] DEEP LEVELS ASSOCIATED WITH VACANCY-IMPURITY COMPLEXES IN GAAS [J].

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[20] EFFECTS INFLUENCING THE STRUCTURAL INTEGRITY OF SEMICONDUCTORS AND THEIR ALLOYS [J].

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