共 31 条
[1]
THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1984, 2 (03)
:449-452
[2]
ELECTRONIC-STRUCTURE AND BINDING-ENERGY OF THE ASGA-ASI PAIR IN GAAS - EL2 AND THE MOBILITY OF INTERSTITIAL ARSENIC
[J].
PHYSICAL REVIEW B,
1987, 35 (12)
:6154-6164
[4]
ELECTRONIC-STRUCTURE OF DEEP SP-BONDED SUBSTITUTIONAL IMPURITIES IN SILICON
[J].
PHYSICAL REVIEW B,
1982, 26 (10)
:5706-5715
[6]
BYLANDER EG, UNPUB
[7]
NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
[J].
PHYSICAL REVIEW B,
1976, 14 (02)
:556-582
[8]
STUDY OF THE IDEAL-VACANCY-INDUCED NEUTRAL DEEP LEVELS IN III-V COMPOUND SEMICONDUCTORS AND THEIR TERNARY ALLOYS
[J].
PHYSICAL REVIEW B,
1981, 24 (04)
:2051-2068
[9]
ZINC VACANCY-ASSOCIATED DEFECTS AND DONOR-ACCEPTOR RECOMBINATION IN ZNSE
[J].
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS,
1980, 13 (34)
:6409-6419