DEEP LEVELS ASSOCIATED WITH VACANCY-IMPURITY COMPLEXES IN GAAS

被引:7
作者
SHEN, YT [1 ]
MYLES, CW [1 ]
机构
[1] TEXAS TECH UNIV,DEPT PHYS & ENGN PHYS,LUBBOCK,TX 79409
关键词
D O I
10.1063/1.98283
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2034 / 2036
页数:3
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