IDENTIFICATION OF DONORS IN GAAS BY RESONANTLY EXCITED HIGH-FIELD MAGNETOSPECTROSCOPY

被引：12

作者：

SKROMME, BJ

BHAT, R

COX, HM

COLAS, E

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 05期

关键词：

D O I：

10.1109/3.27997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1035 / 1045

页数：11

共 26 条

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[6] IDENTIFICATION OF DONORS IN VAPOR GROWN INDIUM-PHOSPHIDE [J].

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[7] DONOR DISCRIMINATION AND BOUND EXCITON SPECTRA IN INP [J].

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SKOLNICK, MS .

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[8] FIELD-DEPENDENT CENTRAL-CELL CORRECTIONS IN GAAS BY LASER SPECTROSCOPY [J].

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PHYSICAL REVIEW LETTERS, 1971, 26 (16) :975-+

[9] IDENTIFICATION OF DONOR SPECIES IN HIGH-PURITY GAAS USING OPTICALLY PUMPED SUBMILLIMETER LASERS [J].

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PARKER, CD ;

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APPLIED PHYSICS LETTERS, 1972, 21 (09) :434-+

[10] DONOR IDENTIFICATION IN BULK GALLIUM-ARSENIDE [J].

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APPLIED PHYSICS LETTERS, 1988, 52 (05) :389-391

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