CHEMICAL-REACTION DYNAMICS OF F ATOM REACTION WITH THE DIMER RECONSTRUCTED SI(100)(2X1) SURFACE

被引：47

作者：

SCHOOLCRAFT, TA

GARRISON, BJ

机构：

[1] Department of Chemistry, 152 Davey Laboratory, The Pennsylvania State University, University Park, Pennsylvania

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 04期

关键词：

Kinetic energy;

D O I：

10.1116/1.576538

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have calculated the initial sticking probability S0for near thermal atomic fluorine on the clean dimer reconstructed Si{ 100} (2x1) surface to be near unity using molecular dynamics simulations. The dependence of the sticking probability on coverage decreases to approximately zero for the fully fluorinated surface. The sticking probability of an F atom on a fully fluorinated silicon surface increases when the kinetic energy of the fluorine atom is above 0.50 eV. © 1990, American Vacuum Society. All rights reserved.

引用

页码：3496 / 3501

页数：6

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