ADSORPTION OF GALLANE ON OXIDIZED SILICON

被引：9

作者：

BUTZ, KW

ELMS, FM

RASTON, CL

LAMB, RN

PIGRAM, PJ

机构：

[1] GRIFFITH UNIV,FAC SCI & TECHNOL,NATHAN,QLD 4111,AUSTRALIA

[2] UNIV NEW S WALES,DEPT PHYS CHEM,KENSINGTON,NSW 2033,AUSTRALIA

来源：

INORGANIC CHEMISTRY | 1993年 / 32卷 / 19期

关键词：

D O I：

10.1021/ic00071a003

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

The trimethylamine adduct of gallane, H3GaNMe3, undergoes dissociative adsorption on the surface of oxidized silicon at dosing pressures of 5 x 10(-8) - 5 x 10(-7) mbar, most likely with gallium bound to oxygen and uptake of some trimethylamine by silicon sites (2), Ga:N = ca. 3:1 (XPS and SSIMS studies). Ab initio molecular orbital calculations (HF/D95*+DZP) gave the five-coordinate species H3GaNH3(OH2) (3) as energetically favored relative to (i) H3GaNH3 and H2O by 0.67 kcal mol-1 and (ii) H3GaOH2 and NH3 by 7.8 kcal mol-1.

引用

页码：3985 / 3986

页数：2

共 26 条

[11]

FOORD JS, 1989, CHEMTRONICS, V4, P263

[12]

FRISCH MJ, 1990, GAUSSIAN 90

[13] Trimethylamine Complexes of Alane as Precursors for the Low-Pressure Chemical Vapor Deposition of Aluminum [J].