GROWTH OF LOW-CARBON CONTENT ALXGA1-XAS BY REDUCED PRESSURE MOVPE USING TRIMETHYLAMINE ALANE

被引：48

作者：

JONES, AC

RUSHWORTH, SA

机构：

[1] Epichem Limited, Wirral, Merseyside L62 3QF, Power Road, Bromborough

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 106卷 / 2-3期

关键词：

D O I：

10.1016/0022-0248(90)90071-R

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High quality AlxGa1-xAs layers have been grown by reduced pressure MOVPE using the new aluminium precursor trimethylamine alane (AlH3(NMe3)) in combination with triethylgallium (Et3Ga). The layers demonstrated n-type conductivity for all aluminium compositions (0<x<0.5). Low temperature photoluminescence (PL) data indicated that carbon was no longer a significant contaminant in the epitaxial layers. © 1990.

引用

页码：253 / 257

页数：5

共 10 条

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