A NEW AND SIMPLE-MODEL FOR GAAS HETEROJUNCTION FET GATE CHARACTERISTICS

被引：67

作者：

CHEN, CH ^{[1
]}

BAIER, SM ^{[1
]}

ARCH, DK ^{[1
]}

SHUR, MS ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期

关键词：

D O I：

10.1109/16.2499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：570 / 577

页数：8

共 14 条

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[2] [Anonymous], 1971, SEMICONDUCT SEMIMET
[3] BAEK JH, 1986, IEEE ELECTR DEVICE L, V7, P519, DOI 10.1109/EDL.1986.26458
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[5] MODEL FOR MODULATION DOPED FIELD-EFFECT TRANSISTOR
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[6] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER
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[7] DEPENDENCE OF CONDUCTION-BAND DISCONTINUITY ON ALUMINUM MOLE FRACTION IN GAAS/ALGAAS HETEROJUNCTIONS
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[J]. ELECTRONICS LETTERS, 1986, 22 (04) : 218 - 220
[8] QUASI-FERMI LEVEL BENDING IN MODFETS AND ITS EFFECT ON FET TRANSFER CHARACTERISTICS
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) : 1017 - 1023
[9] ELECTRIC-FIELD INDUCED HEATING OF HIGH MOBILITY ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES
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PINCZUK, A
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 55 - 57
[10] HOT-ELECTRONS IN MODULATION-DOPED GAAS-ALGAAS HETEROSTRUCTURES
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STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (03) : 322 - 324

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