A NEW AND SIMPLE-MODEL FOR GAAS HETEROJUNCTION FET GATE CHARACTERISTICS

被引：67

作者：

CHEN, CH ^{[1
]}

BAIER, SM ^{[1
]}

ARCH, DK ^{[1
]}

SHUR, MS ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 05期

关键词：

D O I：

10.1109/16.2499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：570 / 577

页数：8

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[11] GATE-LENGTH DEPENDENCE OF THE SPEED OF SSI CIRCUITS USING SUBMICROMETER SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR TECHNOLOGY
SHAH, NJ
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) : 543 - 547
[12] NEW NEGATIVE-RESISTANCE REGIME OF HETEROSTRUCTURE INSULATED GATE TRANSISTOR (HIGFET) OPERATION
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[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (02) : 78 - 80
[13] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS
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DASSARMA, S
[J]. PHYSICAL REVIEW B, 1984, 30 (02) : 840 - 848
[14] SZE SM, 1981, PHYSICS SEMICONDUCTO