LOW-RESISTIVITY W/WSIX BILAYER GATES FOR SELF-ALIGNED GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR LARGE-SCALE INTEGRATED-CIRCUITS

被引：13

作者：

KANAMORI, M

NAGAI, K

NOZAKI, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.583608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1317 / 1320

页数：4

共 6 条

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[2]

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[6] TIW SILICIDE GATE SELF-ALIGNMENT TECHNOLOGY FOR ULTRAHIGH-SPEED GAAS-MESFET LSI VLSIS [J].

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