A STUDY OF OHMIC CONTACTS ON BETA-SIC

被引：15

作者：

CHAUDHRY, MI

BERRY, WB

ZELLER, MV

机构：

[1] UNIV NOTRE DAME,DEPT ELECT & COMP ENGN,NOTRE DAME,IN 46556

[2] NASA,LEWIS RES CTR,RES SENSOR BRANCH,CLEVELAND,OH 44135

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1991年 / 71卷 / 03期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1080/00207219108925489

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study on ohmic contacts on beta-SiC is reported. The contacts were formed using titanium, tungsten, and their silicides. The tungsten and titanium contacts exhibited ohmic behaviour following annealing at a low-temperature (300-degrees-C) but deteriorated when annealed at 600-degrees-C. The minimum contact resistance for titanium and tungsten on SiC was 7.6 x 10(-3) and 6.1 x 10(-3) ohm-cm2, respectively. The silicides of titanium and tungsten yielded a lower contact resistance than the metallic Ti and W. The minimum contact resistance for TiSi2 and WSi2 is 1.1 x 10(-4) and 3.0 x 10(-4) ohm-cm2, respectively.

引用

页码：439 / 444

页数：6

共 10 条

[1]

ADDAMIANO A, 1970, Patent No. 3510733

[2] AUGER AND ELECTRON ENERGY-LOSS STUDY OF THE AL/SIC INTERFACE [J].