STRUCTURAL INVESTIGATIONS ON LOW-FREQUENCY, LOW-TEMPERATURE, PLASMA-DEPOSITED A-SINX-H FILMS

被引：5

作者：

MONTEIL, C

CROS, B

BERJOAN, R

DURAND, J

机构：

[1] LAB PHYSICOCHIM MAT,URA 1312,8 RUE ECOLE NORMALE,F-34053 MONTPELLIER 1,FRANCE

[2] INST SCI & GENIE MAT PROC,F-66120 FONT ROMEU,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1992年 / 151卷 / 1-2期

关键词：

D O I：

10.1016/0022-3093(92)90006-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Hydrogenated amorphous a-SiNx:H films were prepared using a 35 kHz low-frequency glow discharge decomposition of silane and ammonia gas mixture without thermal activation. Samples with different silicon contents were studied by AES and FTIR. Silicon LVV and KLL peak profiles were analyzed as functions of the silicon content of the layer. The structure of the silicon-rich films was found to be highly disordered with several kinds of tetrahedron around the silicon atoms. The structure of the nitrogen-rich films appears more ordered and consists mainly of Si-N bonds and can be described as a modification of the c-Si3N4 structure in which Si-N bonds are replaced by Si-H bonds.

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页码：32 / 38

页数：7

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