STRUCTURAL ORDER IN SI-N AND SI-N-O FILMS PREPARED BY PLASMA ASSISTED CHEMICAL VAPOR-DEPOSITION PROCESS

被引:41
作者
BUDHANI, RC
PRAKASH, S
DOERR, HJ
BUNSHAH, RF
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.574538
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
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页码:1644 / 1648
页数:5
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共 24 条
[1]   SILICON-NITRIDE TRAP PROPERTIES AS REVEALED BY CHARGE-CENTROID MEASUREMENTS ON MNOS DEVICES [J].
ARNETT, PC ;
YUN, BH .
APPLIED PHYSICS LETTERS, 1975, 26 (03) :94-96
[2]  
BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556
[4]   CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES [J].
DEAL, BE ;
MACKENNA, EL ;
CASTRO, PL .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) :997-&
[5]   OPTICAL-CONSTANTS OF QUARTZ, VITREOUS SILICA AND NEUTRON-IRRADIATED VITREOUS SILICA .2. ANALYSIS OF INFRARED-SPECTRUM OF VITREOUS SILICA [J].
GASKELL, PH ;
JOHNSON, DW .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1976, 20 (02) :171-191
[6]   THERMAL NITRIDATION OF SILICON DIOXIDE FILMS [J].
HABRAKEN, FHPM ;
KUIPER, AET ;
TAMMINGA, Y .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6996-7002
[7]   INTERFACE STATES AND FIXED CHARGES IN MNOS STRUCTURES WITH APCVD AND PLASMA SILICON-NITRIDE [J].
HEZEL, R ;
BLUMENSTOCK, K ;
SCHORNER, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (07) :1679-1683
[8]   SILICON-NITRIDE FILM DEPOSITION BY HOT-WALL PLASMA-ENHANCED CVD FOR GAAS LSI [J].
ISHII, Y ;
AOKI, T ;
MIYAZAWA, S .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01) :49-53
[9]   ADVANTAGES OF THERMAL NITRIDE AND NITROXIDE GATE FILMS IN VLSI PROCESS [J].
ITO, T ;
NAKAMURA, T ;
ISHIKAWA, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :498-502
[10]   OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS [J].
LUCOVSKY, G ;
YANG, J ;
CHAO, SS ;
TYLER, JE ;
CZUBATYJ, W .
PHYSICAL REVIEW B, 1983, 28 (06) :3225-3233