BROADENING MECHANISM IN SEMICONDUCTOR (GAAS) LASERS - LIMITATIONS TO SINGLE-MODE POWER EMISSION

被引：69

作者：

ZEE, B

机构：

[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1978年 / 14卷 / 10期

关键词：

D O I：

10.1109/JQE.1978.1069680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：727 / 736

页数：10

共 31 条

[1] THEORY OF OPTICAL GAIN AND THRESHOLD PROPERTIES OF SEMICONDUCTOR LASERS [J].

ALEKSANI.AG ;

POLUEKTO.IA ;

POPOV, YM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1974, QE10 (03) :297-305

[2] VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERS [J].

BROSSON, P ;

RIPPER, JE ;

PATEL, NB .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) :273-280

[3] LUMINESCENCE, LASER, AND CARRIER-LIFETIME BEHAVIOR OF CONSTANT-TEMPERATURE LPE IN1-XGAXP (CHI=0.52) GROWN ON (100)GAAS [J].

CAMPBELL, JC ;

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

LUDOWISE, MJ ;

COLEMAN, JJ .

APPLIED PHYSICS LETTERS, 1974, 24 (07) :327-330

[4] THRESHOLD CHARACTERISTICS OF MULTIMODE LASER OSCILLATORS [J].

CASPERSON, LW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5194-5201

[5] LIMITATIONS OF POWER OUTPUTS FROM CONTINUOUSLY OPERATING GAAS-GA1-XALXAS DOUBLE-HETEROSTRUCTURE LASERS [J].

CHINONE, N ;

ITO, R ;

NAKADA, O .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :785-786

[6]

Eliseev P. G., 1973, Soviet Journal of Quantum Electronics, V3, P181, DOI 10.1070/QE1973v003n03ABEH005104

[7] NONLINEAR LASER NOISE AND COHERENCE [J].

FLECK, JA .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) :188-+

[8] CALCULATIONS OF CONTINUOUS-WAVE LASING RANGE AND LIGHT-OUTPUT POWER FOR DOUBLE-HETEROSTRUCTURE LASERS [J].

GARELJONES, P ;

DYMENT, JC .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :408-413

[9]

GLOVER GH, 1972, APPL PHYS LETT, V21, P409, DOI 10.1063/1.1654433

[10] OPTICAL MASER OSCILLATORS + NOISE [J].

GORDON, EI .

BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P2) :507-+

← 1 2 3 4 →