BROADENING MECHANISM IN SEMICONDUCTOR (GAAS) LASERS - LIMITATIONS TO SINGLE-MODE POWER EMISSION

被引：69

作者：

ZEE, B

机构：

[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, BERKELEY, CA 94720 USA

[2] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1978年 / 14卷 / 10期

关键词：

D O I：

10.1109/JQE.1978.1069680

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：727 / 736

页数：10

共 31 条

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