SURFACE ELECTRICAL-PROPERTIES OF HF-TREATED SI(100)

被引：31

作者：

HUANG, LJ ^{[1
]}

LAU, WM ^{[1
]}

机构：

[1] UNIV WESTERN ONTARIO,DEPT PHYS,LONDON N6A 5B7,ONTARIO,CANADA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 04期

关键词：

D O I：

10.1116/1.577677

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of hydrofluoric acid etching of SiO2/Si on surface band bending of p- and n-Si, and the thermal stability of such effects were studied by x-ray photoelectron spectroscopy and Raman spectroscopy. It was found that near flat band surfaces could be prepared on p- and n-Si by HF etching. However, a significant increase of surface band bending was found when p-Si was treated with an HF concentration of higher than 10%. Raman spectroscopy confirmed that excessive hydrogen incorporation deactivated the boron-dopant in Si by forming an H-B-Si complex. Nevertheless, the boron dopant could be reactivated by annealing at a temperature as low as 120-degrees-C.

引用

页码：812 / 816

页数：5

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