QUANTUM MICROSTRUCTURE DEVICES

被引:24
作者
SAKAKI, H [1 ]
机构
[1] JRDC,QUANTUM TRANSIT PROJECT,TOKYO 153,JAPAN
关键词
A HETEROSTRUCTURES; QUANTUM WELLS; B NANOFABRICATIONS; D ELECTRON TRANSPORT; OPTICAL PROPERTIES;
D O I
10.1016/0038-1098(94)90865-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recent developments in the study of nm-scale semiconductor micro-structures are reviewed with emphasis on their applications to advanced electronic and photonic devices. We describe, in particular, progresses in the use of quantum well structures for such new devices as several novel resonant-tunneling transistors, the Bloch oscillator, and a intersubband infrared laser. Also discussed are key developments to explore the use of nm-scale quantum wires and quantum boxes for injection lasers, transistors and other new devices. Importances of developing epitaxial methods for the fabrication of these in-plane quantum structures are emphasized
引用
收藏
页码:119 / 127
页数:9
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