HYDROGEN INTRODUCTION AND HYDROGEN-ENHANCED THERMAL DONOR FORMATION IN SILICON

被引：71

作者：

STEIN, HJ ^{[1
]}

HAHN, SK ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT MAT SCI & ENGN,STANFORD,CA 94305

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 07期

关键词：

D O I：

10.1063/1.356109

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen has been introduced from a rf plasma into Czochralski Si at 275-degrees-C. Most of the hydrogen is trapped near the surface where it forms Si-H bonds, but a small fraction diffuses into the Si. This fraction enhances oxygen-related thermal donor (TD) formation rates in a diffusionlike profile during subsequent furnace anneals between 350 and 400-degrees-C. A hydrogen concentration that is only a few percent of the oxygen concentration is sufficient to enhance the TD formation rate, indicative of a hydrogen-catalyzed process. Maximum concentrations for TDs after annealing at 400-degrees-C exceed that for retained hydrogen. A mechanism of hydrogen diffusion through oxygen traps and correlated hydrogen-promoted oxygen diffusion is proposed to explain the enhanced TD formation rates.

引用

页码：3477 / 3484

页数：8

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