ELECTRON TRAPS IN SIO2 GROWN IN THE PRESENCE OF TRICHLOROETHYLENE

被引：7

作者：

BHATTACHARYYA, AB ^{[1
]}

MANCHANDA, L ^{[1
]}

VASI, J ^{[1
]}

机构：

[1] INDIAN INST TECHNOL,DEPT ELECT ENGN,BOMBAY 400076,INDIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 12期

关键词：

D O I：

10.1149/1.2123677

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2772 / 2778

页数：7

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