CHLORINE INCORPORATION AND ELECTRICAL-PROPERTIES AT SILICON SURFACES OXIDIZED IN TRICHLOROETHYLENE-OXYGEN

被引：8

作者：

FRENZEL, H

SINGH, BR

HABERLE, K

BALK, P

机构：

[1] Institute of Semiconductor Electronics/SFB 56, Festkörperelektronik, Technical University

来源：

THIN SOLID FILMS | 1979年 / 58卷 / 02期

关键词：

D O I：

10.1016/0040-6090(79)90258-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Secondary ion mass spectrometry measurements on silicon substrates oxidized in trichloroethylene-oxygen showed a narrow chlorine distribution (halfwidth 14±1 nm) in the SiO2 near the SiSiO2 interface. The total amount of chlorine correlated with the passivation against sodium ions but not with surface state and fixed oxide charge densities. Measurements on carbon tetrachloride-oxygen oxides were made for comparison. © 1979.

引用

页码：301 / 305

页数：5

共 8 条

[1]

[Anonymous], COMMUNICATION

[2] EFFECTS OF TRICHLOROETHYLENE-OXIDATION ON CHARACTERISTICS OF MOS DEVICES [J].