METAL-SEMICONDUCTOR INTERFACIAL REACTIONS - NI-SI SYSTEM

被引:84
作者
CHEUNG, NW
GRUNTHANER, FJ
GRUNTHANER, PJ
MAYER, JW
ULLRICH, BM
机构
[1] CALTECH,JET PROP LAB,PASADENA,CA 91103
[2] CORNELL UNIV,ITHACA,NY 14853
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期
关键词
D O I
10.1116/1.570994
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:917 / 923
页数:7
相关论文
共 20 条
[11]  
GRUNTHANER PJ, 1980, THESIS CALIFORNIA I
[12]   ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS [J].
HIRAKI, A ;
SHUTO, K ;
KIM, S ;
KAMMURA, W ;
IWAMI, M .
APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612
[13]  
IWAMI M, 1980, THIN FILM INTERFACES, P102
[14]   INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].
OTTAVIANI, G ;
TU, KN ;
MAYER, JW .
PHYSICAL REVIEW LETTERS, 1980, 44 (04) :284-287
[15]  
Rhoderick E.H., 1978, METAL SEMICONDUCTORS
[16]  
ROTH JA, 1978, THESIS U SO CALIFORN
[17]   PREPARATION OF THIN WINDOWS IN SILICON MASKS FOR X-RAY LITHOGRAPHY [J].
SCHMIDT, CJ ;
LENZO, PV ;
SPENCER, EG .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :4080-4082
[18]  
TU KN, 1975, APPL PHYS LETT, V27, P221, DOI 10.1063/1.88436
[19]   STRUCTURE AND GROWTH KINETICS OF NI2SI ON SILICON [J].
TU, KN ;
CHU, WK ;
MAYER, JW .
THIN SOLID FILMS, 1975, 25 (02) :403-413
[20]  
WALSER RM, 1979, APPL PHYS LETT, V28, P629