REVIEW OF CURRENT PROPOSED TECHNOLOGIES FOR MASS STORAGE SYSTEMS

被引：11

作者：

MATICK, RE

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1972年 / 60卷 / 03期

关键词：

D O I：

10.1109/PROC.1972.8620

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：266 / +

页数：1

共 114 条

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BOYLE, WS ;

SMITH, GE .

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[13]

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[14]

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[15] MASS MEMORY IN COMPUTER SYSTEMS [J].

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IEEE TRANSACTIONS ON MAGNETICS, 1969, MAG5 (03) :635-&

[16] SWITCHING AND NEGATIVE RESISTANCE IN THIN FILMS OF NICKEL OXIDE [J].

BRUYERE, JC ;

CHAKRAVERTY, BK .

APPLIED PHYSICS LETTERS, 1970, 16 (01) :40-+

[17] NEGATIVE RESISTANCE, CONDUCTIVE SWITCHING, AND MEMORY EFFECT IN SILICON-DOPED YTTRIUM-IRON GARNET CRYSTALS [J].

BULLOCK, DC ;

EPSTEIN, DJ .

APPLIED PHYSICS LETTERS, 1970, 17 (05) :199-&

[18]

CHANG H, 1971, FEB SOL STAT CIRC C

[19] MAGNETO-OPTICAL VARIABLE MEMORY BASED UPON PROPERTIES OF A TRANSPARENT FERRIMAGNETIC GARNET AT ITS COMPENSATION TEMPERATURE [J].

CHANG, JT ;

DILLON, JF ;

GIANOLA, UF .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (3P2) :1110-+

[20]

CHAPMAN DW, 1970, 1970 P IEEE INT COMP, P56

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