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CHARACTERIZATION OF THE COGA/GAAS INTERFACE
被引:15
作者
:
ZHU, JG
论文数:
0
引用数:
0
h-index:
0
机构:
BELLCORE,RED BANK,NJ 07701
BELLCORE,RED BANK,NJ 07701
ZHU, JG
[
1
]
CARTER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
BELLCORE,RED BANK,NJ 07701
BELLCORE,RED BANK,NJ 07701
CARTER, CB
[
1
]
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELLCORE,RED BANK,NJ 07701
BELLCORE,RED BANK,NJ 07701
PALMSTROM, CJ
[
1
]
GARRISON, KC
论文数:
0
引用数:
0
h-index:
0
机构:
BELLCORE,RED BANK,NJ 07701
BELLCORE,RED BANK,NJ 07701
GARRISON, KC
[
1
]
机构
:
[1]
BELLCORE,RED BANK,NJ 07701
来源
:
APPLIED PHYSICS LETTERS
|
1989年
/ 55卷
/ 01期
关键词
:
D O I
:
10.1063/1.101748
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:39 / 41
页数:3
相关论文
共 18 条
[1]
CARTER CC, UNPUB
[2]
LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY
CHEN, SH
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CHEN, SH
CARTER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CARTER, CB
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
PALMSTROM, CJ
[J].
JOURNAL OF MATERIALS RESEARCH,
1988,
3
(06)
: 1385
-
1396
[3]
TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON LATERAL REACTION OF GAAS WITH NI
CHEN, SH
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CHEN, SH
CARTER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CARTER, CB
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
PALMSTROM, CJ
OHASHI, T
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
OHASHI, T
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(12)
: 803
-
805
[4]
GARRISON K, UNPUB
[5]
EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001)
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
GUERIN, R
论文数:
0
引用数:
0
h-index:
0
GUERIN, R
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
SECOUE, M
[J].
ELECTRONICS LETTERS,
1987,
23
(19)
: 1004
-
1005
[6]
MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES
HARBISON, JP
论文数:
0
引用数:
0
h-index:
0
HARBISON, JP
SANDS, T
论文数:
0
引用数:
0
h-index:
0
SANDS, T
TABATABAIE, N
论文数:
0
引用数:
0
h-index:
0
TABATABAIE, N
CHAN, WK
论文数:
0
引用数:
0
h-index:
0
CHAN, WK
FLOREZ, LT
论文数:
0
引用数:
0
h-index:
0
FLOREZ, LT
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(18)
: 1717
-
1719
[7]
MATTHEWS JW, 1975, EPITAXIAL GROWTH, pCH8
[8]
HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE
OTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
OTSUKA, N
CHOI, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
CHOI, C
论文数:
引用数:
h-index:
机构:
NAKAMURA, Y
NAGAKURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
NAGAKURA, S
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
FISCHER, R
PENG, CK
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
PENG, CK
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
MORKOC, H
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(05)
: 277
-
279
[9]
Palmstrom C. J., 1985, Gallium arsenide materials, devices, and circuits, P195
[10]
EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
PALMSTROM, CJ
FIMLAND, BO
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
FIMLAND, BO
SANDS, T
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
SANDS, T
GARRISON, KC
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
GARRISON, KC
BARTYNSKI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
BARTYNSKI, RA
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
65
(12)
: 4753
-
4758
←
1
2
→
共 18 条
[1]
CARTER CC, UNPUB
[2]
LATERAL DIFFUSION IN NI-GAAS COUPLES INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY
CHEN, SH
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CHEN, SH
CARTER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CARTER, CB
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
PALMSTROM, CJ
[J].
JOURNAL OF MATERIALS RESEARCH,
1988,
3
(06)
: 1385
-
1396
[3]
TRANSMISSION ELECTRON-MICROSCOPY STUDIES ON LATERAL REACTION OF GAAS WITH NI
CHEN, SH
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CHEN, SH
CARTER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
CARTER, CB
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
PALMSTROM, CJ
OHASHI, T
论文数:
0
引用数:
0
h-index:
0
机构:
CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
OHASHI, T
[J].
APPLIED PHYSICS LETTERS,
1986,
48
(12)
: 803
-
805
[4]
GARRISON K, UNPUB
[5]
EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V COMPOUND SEMICONDUCTOR INTERFACE - NIGA ON GAAS (001)
GUIVARCH, A
论文数:
0
引用数:
0
h-index:
0
GUIVARCH, A
GUERIN, R
论文数:
0
引用数:
0
h-index:
0
GUERIN, R
SECOUE, M
论文数:
0
引用数:
0
h-index:
0
SECOUE, M
[J].
ELECTRONICS LETTERS,
1987,
23
(19)
: 1004
-
1005
[6]
MOLECULAR-BEAM EPITAXIAL-GROWTH OF ULTRATHIN BURIED METAL LAYERS - (AL,GA)AS/NIAL/(AL,GA)AS HETEROSTRUCTURES
HARBISON, JP
论文数:
0
引用数:
0
h-index:
0
HARBISON, JP
SANDS, T
论文数:
0
引用数:
0
h-index:
0
SANDS, T
TABATABAIE, N
论文数:
0
引用数:
0
h-index:
0
TABATABAIE, N
CHAN, WK
论文数:
0
引用数:
0
h-index:
0
CHAN, WK
FLOREZ, LT
论文数:
0
引用数:
0
h-index:
0
FLOREZ, LT
KERAMIDAS, VG
论文数:
0
引用数:
0
h-index:
0
KERAMIDAS, VG
[J].
APPLIED PHYSICS LETTERS,
1988,
53
(18)
: 1717
-
1719
[7]
MATTHEWS JW, 1975, EPITAXIAL GROWTH, pCH8
[8]
HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE
OTSUKA, N
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
OTSUKA, N
CHOI, C
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
CHOI, C
论文数:
引用数:
h-index:
机构:
NAKAMURA, Y
NAGAKURA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
NAGAKURA, S
FISCHER, R
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
FISCHER, R
PENG, CK
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
PENG, CK
MORKOC, H
论文数:
0
引用数:
0
h-index:
0
机构:
TOKYO INST TECHNOL,MEGURO KU,TOKYO 152,JAPAN
MORKOC, H
[J].
APPLIED PHYSICS LETTERS,
1986,
49
(05)
: 277
-
279
[9]
Palmstrom C. J., 1985, Gallium arsenide materials, devices, and circuits, P195
[10]
EPITAXIAL COGA AND TEXTURED COAS CONTACTS ON GA1-XALXAS FABRICATED BY MOLECULAR-BEAM EPITAXY
PALMSTROM, CJ
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
PALMSTROM, CJ
FIMLAND, BO
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
FIMLAND, BO
SANDS, T
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
SANDS, T
GARRISON, KC
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
GARRISON, KC
BARTYNSKI, RA
论文数:
0
引用数:
0
h-index:
0
机构:
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
RUTGERS STATE UNIV,DEPT PHYS,PISCATAWAY,NJ 08854
BARTYNSKI, RA
[J].
JOURNAL OF APPLIED PHYSICS,
1989,
65
(12)
: 4753
-
4758
←
1
2
→