EFFECT OF DEPOSITION TEMPERATURE ON PLASMA GROWN ALUMINUM-OXIDE FILMS

[1] BURLOW KJ, 1987, APPL SURF SCI, V30, P47

[2] PLASMA DEPOSITION OF ALUMINUM-OXIDE FILMS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) : 127 - 134

[3] INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 372 - +

[4] ERLICH DJ, 1981, CHEM PHYS LETT, V79, P381

[5] PROPERTIES OF RF-SPUTTERED AL2O3 FILMS DEPOSITED BY PLANAR MAGNETRON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 127 - 133

[6] PLASMA ENHANCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION OF ALUMINUM-OXIDE DIELECTRIC FILM FOR DEVICE APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5436 - 5440

[7] SCHLESIER KM, 1976, RCA REV, V37, P360

[1] BURLOW KJ, 1987, APPL SURF SCI, V30, P47

[2] PLASMA DEPOSITION OF ALUMINUM-OXIDE FILMS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (02) : 127 - 134

[3] INTERFACE PROPERTIES OF SI-(SIO2)-AL2 O3 STRUCTURES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (03) : 372 - +

[4] ERLICH DJ, 1981, CHEM PHYS LETT, V79, P381

[5] PROPERTIES OF RF-SPUTTERED AL2O3 FILMS DEPOSITED BY PLANAR MAGNETRON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 127 - 133

[6] PLASMA ENHANCED METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION OF ALUMINUM-OXIDE DIELECTRIC FILM FOR DEVICE APPLICATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5436 - 5440

[7] SCHLESIER KM, 1976, RCA REV, V37, P360