EARLY GROWTH-STUDIES AND PROPERTIES OF BP

被引：1

作者：

GARG, SG ^{[1
]}

NEVIN, JH ^{[1
]}

机构：

[1] UNIV CINCINNATI,SOLID STATE ELECTR LAB,CINCINNATI,OH 45221

来源：

MATERIALS RESEARCH BULLETIN | 1981年 / 16卷 / 11期

关键词：

D O I：

10.1016/0025-5408(81)90058-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1395 / 1400

页数：6

共 8 条

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CHU, TL ;

GILL, M ;

SMELTZER, RK .

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[2] CRYSTALS AND EPITAXIAL LAYERS OF BORON PHOSPHIDE [J].

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JACKSON, JM ;

HYSLOP, AE ;

CHU, SC .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (01) :420-&

[3] CRYSTALLINE PROPERTIES OF BP EPITAXIALLY GROWN ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM [J].

HIRAI, Y ;

SHOHNO, K .

JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) :124-132

[4] EPITAXIAL-GROWTH OF BP COMPOUNDS ON SI SUBSTRATES USING B2H6-PH3-H2 SYSTEM [J].

SHOHNO, K ;

TAKIGAWA, M ;

NAKADA, T .

JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) :193-196

[5] CRYSTAL-GROWTH OF BORON MONOPHOSPHIDE USING A B2H6-PH3-H2 SYSTEM [J].

SHOHNO, K ;

OHTAKE, H ;

BLOEM, J .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :187-191

[6] SEMICONDUCTING PROPERTIES OF CUBIC BORON PHOSPHIDE [J].

STONE, B ;

HILL, D .

PHYSICAL REVIEW LETTERS, 1960, 4 (06) :282-284

[7] HETEROEPITAXIAL GROWTH OF BORON MONOPHOSPHIDE ON SILICON SUBSTRATE USING B2H6-PH3-H2 SYSTEM [J].

TAKIGAWA, M ;

HIRAYAMA, M ;

SHOHNO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :411-416

[8]

TAKIGAWA M, 1974, J ELECTROCHEM SOC, V121, P824

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