PRELUDE TO ETCHING - THE SURFACE INTERACTION OF CHLORINE ON GAAS(110)

被引：34

作者：

STEPNIAK, F

RIOUX, D

WEAVER, JH

机构：

[1] Department of Materials Science and Chemical Engineering, University of Minnesota, Minneapolis

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.50.1929

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The interaction of Cl2 with GaAs(110) was studied with photoelectron spectroscopy at 300 K. The results show that Cl2 dissociates and prefers Ga1+ bonding at low coverage and chemically distinct states can be correlated with structural information obtained from scanning tunneling microscopy. This Cl-Ga state was characterized by a distinct surface bonding configuration as Ga atoms lost charge, As atoms gained charge, and the surface bonds became less sp3-like. The result was a chemical shift for both Ga and As. Cl-Ga islands developed as the Cl coverage increased and subsequent adsorption of Cl within those islands enabled the formation of Cl-As bonds and an As1+ state.

引用

页码：1929 / 1933

页数：5

共 31 条

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