INSTABILITIES OF SIMPLE-MODELS OF C-ASI COMPLEXES IN GALLIUM-ARSENIDE

被引：10

作者：

JONES, R ^{[1
]}

OBERG, S ^{[1
]}

机构：

[1] UNIV LULEA,DEPT MATH,S-95187 LULEA,SWEDEN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 06期

关键词：

D O I：

10.1088/0268-1242/7/6/020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Irradiation of GaAs:C produces C-related defects called C(1) centres. These are analysed using first-principles theory. We find that the stable defect has C3v symmetry, in agreement with FTIR results, but two obvious models, one with As(i) lying at an anti-bonding site to C(As) and the other with the interstitial anti-bonding to an on-site Ga neighbour, are unstable. We find that the interstitial displaces one of the Ga atoms bonded to C(As) into a bond-centred configuration, leaving As(i) as an anti-site defect. The calculated vibrational modes of this structure are in reasonable agreement with the observed ones.

引用

页码：855 / 857

页数：3

共 14 条

[1] LOW-SYMMETRY INTERSTITIAL BORON CENTER IN IRRADIATED GALLIUM-ARSENIDE [J].