ELECTROLUMINESCENCE FROM N(+)-TYPE POROUS SILICON CONTACTED WITH LAYER-BY-LAYER DEPOSITED POLYANILINE

被引：61

作者：

BSIESY, A

NICOLAU, YF

ERMOLIEFF, A

MULLER, F

GASPARD, F

机构：

[1] CEN GRENOBLE,CEA,PMS,SESAM,DEPT RECH FONDAMENTALE MAT CONDENSEE,F-38054 GRENOBLE,FRANCE

[2] UNIV GRENOBLE 1,CNRS,URA 08,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

[3] CEN GRENOBLE,CEA TECHNOL AVANCEES,DOPT,LETI,F-38054 GRENOBLE,FRANCE

来源：

THIN SOLID FILMS | 1995年 / 255卷 / 1-2期

关键词：

LUMINESCENCE; POLYMERS; SILICON; X-RAY PHOTOELECTRON SPECTROSCOPY;

D O I：

10.1016/0040-6090(95)91136-A

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A light-emitting diode is made by closely contacting an n(+)-type porous Si him with chemically polymerized polyaniline inside the pores of Si. The tight filling of the Si pores by polyaniline was testified by XPS depth profiling analysis. The diode shows a rectifying I-V characteristic, has a series resistance of 2 Omega and passes out high current densities under a forward bias of only a few volts. The diode efficiently emits red light under a forward bias voltage exceeding 3 V.

引用

页码：43 / 48

页数：6

共 54 条

[51]

Stafstrom S., 1987, Electronic Properties of Conjugated Polymers. Proceedings of an International Winter School, P238

[52]

STEINER P, 1993, MAT RES S C, V283, P343

[53] LIGHT-EMITTING POROUS SILICON DIODE WITH AN INCREASED ELECTROLUMINESCENCE QUANTUM EFFICIENCY [J].

STEINER, P ;

KOZLOWSKI, F ;

LANG, W .

APPLIED PHYSICS LETTERS, 1993, 62 (21) :2700-2702

[54] NANOSIZE STRUCTURES CONNECTIVITY IN POROUS SILICON AND ITS RELATION TO PHOTOLUMINESCENCE EFFICIENCY [J].

TESCHKE, O ;

ALVAREZ, F ;

TESSLER, L ;

KLEINKE, MU .

APPLIED PHYSICS LETTERS, 1993, 63 (14) :1927-1929

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