REDUCTION OF INTERFACE-TRAP DENSITY IN METAL-OXIDE-SEMICONDUCTOR DEVICES BY IRRADIATION

被引：12

作者：

BALASINSKI, A ^{[1
]}

MA, TP ^{[1
]}

机构：

[1] YALE UNIV,DEPT ELECT ENGN,NEW HAVEN,CT 06520

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 24期

关键词：

D O I：

10.1063/1.109118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Annealing o inter ace defects in metal-oxide-semiconductor (MOS) devices by x-ray irradiation has been observed. The effect occurs in rad-hard devices which had been previously damaged severely by high-field Fowler-Nordheim electron injection, but has not been observed in standard MOS devices which are not radiation-hardened. A mechanism based on the recombination-enhanced-defect-reactions process is proposed to explain the results.

引用

页码：3170 / 3171

页数：2

共 5 条

[1] HOT-CARRIER EFFECTS ON INTERFACE-TRAP CAPTURE CROSS-SECTIONS IN MOSFETS AS STUDIED BY CHARGE PUMPING [J].