OPTIMIZATION OF OXIDE-SEMICONDUCTOR-BASE-SEMICONDUCTOR SOLAR-CELLS

[41] Shewchun J., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P528

[42] POSSIBLE EXPLANATION FOR PHOTO-VOLTAIC EFFECT IN INDIUM TIN OXIDE ON INP SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) : 4588 - 4591

[43] DETERMINATION OF ELECTRON-AFFINITY OF IN2O3 FROM ITS HETEROJUNCTION PHOTOVOLTAIC PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1081 - 1081

[44] IMPORTANCE OF ELECTRON-AFFINITY OF OXIDE-SEMI-CONDUCTORS AS USED IN SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 601 - 603

[45] SINGH R, 1979, THESIS MCMASTER U HA

[46] Sree Harsha K. S., 1977, Applied Physics Letters, V30, P645, DOI 10.1063/1.89270

[47] ELECTRICAL AND PHOTO-VOLTAIC CHARACTERISTICS OF INDIUM-TIN OXIDE-SILICON HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 603 - 608

[48] INTENSITY EFFECTS IN SNO2-SI HETEROJUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 463 - 467

[49] Wang E. Y., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P967

[50] GENERAL PROPERTIES OF SNO2-GAAS AND SNO2-GE HETEROJUNCTION PHOTO-VOLTAIC CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) : 800 - 803

[41] Shewchun J., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P528

[42] POSSIBLE EXPLANATION FOR PHOTO-VOLTAIC EFFECT IN INDIUM TIN OXIDE ON INP SOLAR-CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (08) : 4588 - 4591

[43] DETERMINATION OF ELECTRON-AFFINITY OF IN2O3 FROM ITS HETEROJUNCTION PHOTOVOLTAIC PROPERTIES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (06) : 1081 - 1081

[44] IMPORTANCE OF ELECTRON-AFFINITY OF OXIDE-SEMI-CONDUCTORS AS USED IN SOLAR-CELLS [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 601 - 603

[45] SINGH R, 1979, THESIS MCMASTER U HA

[46] Sree Harsha K. S., 1977, Applied Physics Letters, V30, P645, DOI 10.1063/1.89270

[47] ELECTRICAL AND PHOTO-VOLTAIC CHARACTERISTICS OF INDIUM-TIN OXIDE-SILICON HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1978, 21 (04) : 603 - 608

[48] INTENSITY EFFECTS IN SNO2-SI HETEROJUNCTION SOLAR-CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 463 - 467

[49] Wang E. Y., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P967

[50] GENERAL PROPERTIES OF SNO2-GAAS AND SNO2-GE HETEROJUNCTION PHOTO-VOLTAIC CELLS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) : 800 - 803