LIGHT-INDUCED METASTABLE DEFECTS IN A-SI-H AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE MEASUREMENTS AT 2K

被引：8

作者：

HAN, DX ^{[1
]}

YOSHIDA, M ^{[1
]}

MORIGAKI, K ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 63卷 / 12期

关键词：

D O I：

10.1016/0038-1098(87)91053-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1083 / 1086

页数：4

共 17 条

[1] CRANDALL RS, 1985, TETRAHEDRALLY BONDED, P315
[2] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458
[3] HAN D, IN PRESS
[4] NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON
HIRABAYASHI, I
MORIGAKI, K
NITTA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) : L357 - L360
[5] NEW FABRICATION PROCESS FOR A-SI PHOTOVOLTAIC DEVICES USING CYLINDRICAL DIODE GLOW-DISCHARGE
MINOMURA, S
TSUJI, K
HIRAGA, T
MATSUMURA, M
FUKUI, K
YOSHIDA, T
OKAYASU, Y
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1119 - 1122
[6] DEFECT CREATION BY OPTICAL-EXCITATION IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE
MORIGAKI, K
SANO, Y
HIRABAYASHI, I
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (01) : 147 - 152
[7] GAP STATES IN HYDROGENATED AMORPHOUS-SILICON - THE ORIGINS OF THE LIGHT-INDUCED ELECTRON-SPIN-RESONANCE AND THE LOW-ENERGY LUMINESCENCE
MORIGAKI, K
YOSHIDA, M
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 289 - 298
[8] Morigaki K., 1987, Disordered semiconductors, P415
[9] MORIGAKI K, 1984, SEMICONDUCT SEMIMET, V21, P155
[10] FATIGUE EFFECT IN LUMINESCENCE OF GLOW-DISCHARGE AMORPHOUS-SILICON AT LOW-TEMPERATURES
MORIGAKI, K
HIRABAYASHI, I
NAKAYAMA, M
NITTA, S
SHIMAKAWA, K
[J]. SOLID STATE COMMUNICATIONS, 1980, 33 (08) : 851 - 856

← 1 2 →