HYSTERESIS AND DISCONTINUITY IN THE INDENTATION LOAD-DISPLACEMENT BEHAVIOR OF SILICON

被引：81

作者：

PHARR, GM

OLIVER, WC

CLARKE, DR

机构：

[1] OAK RIDGE NATL LAB,DIV MET & CERAM,OAK RIDGE,TN 37831

[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

SCRIPTA METALLURGICA | 1989年 / 23卷 / 11期

关键词：

D O I：

10.1016/0036-9748(89)90488-2

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：1949 / 1952

页数：4

共 15 条

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