IMPROVED NUCLEATION AND A PLANAR INTERFACE IN LPE GROWN PB1-XSNXTE HETEROSTRUCTURES

被引：8

作者：

TAMARI, N

SHTRIKMAN, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 47卷 / 03期

关键词：

D O I：

10.1016/0022-0248(79)90215-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：463 / 466

页数：4

共 19 条

[1] BACKSIDE-ILLUMINATED PB1-XSNX TE HETEROJUNCTION PHOTODIODE [J].

ANDREWS, AM ;

LONGO, JT ;

CLARKE, JE ;

GERTNER, ER .

APPLIED PHYSICS LETTERS, 1975, 26 (08) :438-441

[2] SUBSTRATE ORIENTATION AND SURFACE MORPHOLOGY OF GAAS LIQUID-PHASE EPITAXIAL LAYERS [J].

BAUSER, E ;

FRIK, M ;

LOECHNER, KS ;

SCHMIDT, L ;

ULRICH, R .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :148-153

[3] OPTICALLY PUMPED PB1-XSNXTE LASERS [J].

CARPENTER, R ;

HAMER, MF ;

BICKLEY, WP ;

EDDOLLS, DV .

INFRARED PHYSICS, 1978, 18 (03) :193-197

[4] TEMPERATURE-GRADIENT LPE GROWTH OF PB1-XSNXTE [J].

GROVES, SH .

JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) :195-206

[5] DOUBLE HETEROSTRUCTURE PB1-XSNX TE-PBTE LASERS WITH CW OPERATION AT 77 K [J].

GROVES, SH ;

NILL, KW ;

STRAUSS, AJ .

APPLIED PHYSICS LETTERS, 1974, 25 (06) :331-333

[6]

GROVES SH, 1974, SOLID STATE RES REPO, V2, P17

[7] 2-COLOR DETECTOR ARRAYS BY PBTE-PBO.8SNO.2TE LIQUID-PHASE EPITAXY [J].

LOCKWOOD, AH ;

BALON, JR ;

CHIA, PS ;

RENDA, FJ .

INFRARED PHYSICS, 1976, 16 (05) :509-514

[8] IMPROVED SURFACE QUALITY OF SOLUTION GROWN GAAS AND PB1-XSNXTE EPITAXIAL LAYERS - NEW TECHNIQUE [J].

LONGO, JT ;

HARRIS, JS ;

CHU, JC ;

GERTNER, ER .

JOURNAL OF CRYSTAL GROWTH, 1972, 15 (02) :107-&

[9]

LONGO JT, 1973, J NONMETALS, V1, P321

[10] TRANSIENT-MODE LIQUID-PHASE EPITAXY OF GAAS ON INP AND ALGAAS ON GAP [J].

MOON, RL ;

VANDERPLAS, HA .

JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (02) :347-362

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