EFFICIENT 1.06-MUM EMISSION FROM INXGA1-XAS ELECTROLUMINESCENT DIODES

被引：15

作者：

NUESE, CJ

ENSTROM, RE

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1972.17549

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1067 / &

共 11 条

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[7] OPTIMIZATION OF ELECTROLUMINESCENT EFFICIENCIES FOR VAPOR-GROWN GAAS 1-XPX DIODES
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[8] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
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[9] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
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[10] TIETJEN JJ, 1968, F1962868C0190 USAF C