EXPERIMENTAL-DETERMINATION OF EQUILIBRIUM-CONSTANTS FOR EXCITONIC SYSTEMS IN STRESSED, ULTRAPURE SILICON

被引：41

作者：

GOURLEY, PL

WOLFE, JP

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6338

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：6338 / 6348

页数：11

相关论文

共 35 条

[21] NOLLE EL, 1967, FIZ TVERD TELA+, V9, P90
[22] AUGER AND RADIATIVE RECOMBINATION OF ACCEPTOR BOUND EXCITONS IN SEMICONDUCTORS
OSBOURN, GC
LYON, SA
ELLIOTT, KR
SMITH, DL
MCGILL, TC
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1339 - 1342
[23] OSBOURN GC, 1979, THESIS CALIFORNIA I
[24] AUGER LIFETIMES FOR EXCITONS BOUND TO NEUTRAL DONORS AND ACCEPTORS IN SI
SCHMID, W
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 84 (02): : 529 - 540
[25] LONG LIFETIMES OF EXCITONS IN STRESSED GE
SCHOWALTER, LJ
STERANKA, FM
SALAMON, MB
WOLFE, JP
[J]. SOLID STATE COMMUNICATIONS, 1981, 37 (04) : 319 - 324
[26] INVESTIGATION OF EXCITON-PLASMA MOTT TRANSITION IN SI
SHAH, J
COMBESCOT, M
DAYEM, AH
[J]. PHYSICAL REVIEW LETTERS, 1977, 38 (25) : 1497 - 1500
[27] VALLEY-ORBIT SPLITTING OF FREE EXCITONS - ABSORPTION EDGE OF SI
SHAKLEE, KL
NAHORY, RE
[J]. PHYSICAL REVIEW LETTERS, 1970, 24 (17) : 942 - &
[28] LIFETIME, SURFACE-TENSION, AND IMPURITY EFFECTS IN ELECTRON-HOLE CONDENSATION
SILVER, RN
[J]. PHYSICAL REVIEW B, 1975, 11 (04): : 1569 - 1582
[29] DETERMINATION OF BORON AND PHOSPHORUS CONCENTRATION IN SILICON BY PHOTO-LUMINESCENCE ANALYSIS
TAJIMA, M
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 719 - 721
[30] DRIFT AND DIFFUSION OF FREE-EXCITONS IN SI
TAMOR, MA
WOLFE, JP
[J]. PHYSICAL REVIEW LETTERS, 1980, 44 (25) : 1703 - 1706

← 1 2 3 4 →