EXCITATION MECHANISMS OF PHOTOLUMINESCENCE IN DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURES

被引：45

作者：

SKOLNICK, MS ^{[1
]}

SIMMONDS, PE ^{[1
]}

HAYES, DG ^{[1
]}

HIGGS, AW ^{[1
]}

SMITH, GW ^{[1
]}

PITT, AD ^{[1
]}

WHITEHOUSE, CR ^{[1
]}

HUTCHINSON, HJ ^{[1
]}

WHITE, CRH ^{[1
]}

EAVES, L ^{[1
]}

HENINI, M ^{[1
]}

HUGHES, OH ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT PHYS,NOTTINGHAM NG7 2RD,ENGLAND

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.42.3069

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The excitation mechanisms which lead to photoluminescence (PL) in the quantum wells of double-barrier resonant-tunneling structures are analyzed. It is shown that on an electron-tunneling resonance, in the present structures with wide depletion regions under bias, recombination occurs predominantly between electrons which tunnel into the quantum well and holes which are created in the thick GaAs contacts. These holes drift and diffuse to the barriers where they accumulate, and then tunnel into the well. The importance of photon recycling of photocreated carriers is demonstrated. Finally, the factors which control the variation of PL intensity with applied bias are discussed. © 1990 The American Physical Society.

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页码：3069 / 3076

页数：8

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