HEAVILY PHOSPHORUS-DOPED EPITAXIAL SI DEPOSITED BY LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：5

作者：

BAERT, K ^{[1
]}

VANHELLEMONT, J ^{[1
]}

VANDERVORST, W ^{[1
]}

NIJS, J ^{[1
]}

KONAGAI, M ^{[1
]}

机构：

[1] INTERUNIV MICROELECTR CTR,B-3001 HEVERLEE,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105346

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heavily P-doped Si layers have been grown at very low temperature (< 600-degrees-C) by rf plasma chemical vapor deposition. Films grown by vapor phase epitaxy (VPE) or solid phase epitaxy (SPE) are compared. By VPE growth, fully electrically activated films with a P concentration in excess of 10(21) cm-3 and steep doping profiles (less-than-or-equal-to 4 nm/dec) were obtained. SPE films are not fully activated and an anomalously fast P diffusion is observed during the crystallization at 600-degrees-C. On the other hand, the Hall mobility of VPE films is significantly lower than that of SPE films.

引用

页码：797 / 799

页数：3

共 17 条

[1]

BAERT K, 1989, THIN SOLID FILMS, V184, P139

[2]

BEYER W, 1984, SEMICONDUCT SEMIMET, V21, P257

[3] PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF INSITU DOPED EPITAXIAL SILICON AT LOW-TEMPERATURES .1. ARSENIC DOPING [J].

COMFORT, JH ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (03) :1053-1066

[4]

FINETTI M, 1981, J ELECTROCHEM SOC, V128, P1315

[5]

GYULAI J, 1984, ION IMPLANTATION SCI, P139

[6] THE EFFECT OF ION-IMPLANTATION DAMAGE ON DOPANT DIFFUSION IN SILICON DURING SHALLOW-JUNCTION FORMATION [J].

KIM, Y ;

MASSOUD, HZ ;

FAIR, RB .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) :143-150

[7]

LEONG W, 1988, P UK INFORMATION TEC, P382

[8] PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON VIA LPCVD .2. SURFACE INTERACTIONS OF THE SILANE PHOSPHINE SILICON SYSTEM [J].

MEYERSON, BS ;

YU, ML .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2366-2368

[9] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J].

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :797-799

[10] RELATIONSHIP BETWEEN RESISTIVITY AND PHOSPHORUS CONCENTRATION IN SILICON [J].

MOUSTY, F ;

OSTOJA, P ;

PASSARI, L .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (10) :4576-4580

← 1 2 →