TRAP GENERATION AT SI/SIO2 INTERFACE IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR TRANSISTORS BY 4.9 EV ULTRAVIOLET-IRRADIATION

被引：13

作者：

LING, CH

机构：

[1] Department of Electrical Engineering, National University of Singapore, Kent Ridge

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357046

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subfemtofarad changes are reported in the gate-to-drain capacitance of submicrometer metal-oxide-semiconductor transistors subjected to 4.9 eV (253.7 nm) ultraviolet irradiation. The observation is attributed to trap generation at S/SiO2 interface, proposed to be due to the breaking of Si-H bonds.

引用

页码：581 / 583

页数：3

共 9 条

[1] ULTRAVIOLET BLEACHING AND REGENERATION OF SI=SI3 CENTERS AT THE SI/SIO2 INTERFACE OF THINLY OXIDIZED SILICON-WAFERS
CAPLAN, PJ
POINDEXTER, EH
MORRISON, SR
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 541 - 545
[2] HOT-ELECTRON-INDUCED MOSFET DEGRADATION - MODEL, MONITOR, AND IMPROVEMENT
HU, CM
TAM, SC
HSU, FC
KO, PK
CHAN, TY
TERRILL, KW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) : 375 - 385
[3] VELOCITY SATURATION EFFECT ON SHORT-CHANNEL MOS-TRANSISTOR CAPACITANCE
IWAI, H
PINTO, MR
RAFFERTY, CS
ORISTIAN, JE
DUTTON, RW
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 120 - 122
[4] CHARACTERISTIC ELECTRONIC DEFECTS AT THE SI-SIO2 INTERFACE
JOHNSON, NM
BIEGELSEN, DK
MOYER, MD
CHANG, ST
POINDEXTER, EH
CAPLAN, PJ
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 563 - 565
[5] MECHANISM OF ULTRAVIOLET-IRRADIATION EFFECT ON SI-SIO2 INTERFACE IN SILICON-WAFERS
KATAYAMA, K
SHIMURA, F
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (8A): : L1001 - L1004
[6] CHARACTERIZATION OF CHARGE TRAPPING IN SUBMICROMETER NMOSFETS BY GATE CAPACITANCE MEASUREMENTS
LING, CH
YEOW, YT
AH, LK
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (11) : 587 - 589
[7] ELECTRON TRAPPING AND INTERFACE STATE GENERATION IN PMOSFETS - RESULTS FROM GATE CAPACITANCE
LING, CH
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (10A): : L1371 - L1373
[8] Nicollian E., 1982, MOS METAL OXIDE SEMI
[9] TRANSIENT RECOVERY OF MINORITY-CARRIER LIFETIME IN SILICON AFTER ULTRAVIOLET-IRRADIATION
ZHONG, L
BUCZKOWSKI, A
KATAYAMA, K
SHIMURA, F
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (08) : 931 - 933

← 1 →