ELECTRONIC-TRANSITIONS ON UHV-CLEAVED SI (111) ADSORBED WITH OXYGEN

被引:7
作者
NISHIJIMA, M
MIYAMURA, M
SAKISAKA, Y
ONCHI, M
机构
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D O I
10.1016/0038-1098(78)90156-4
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:457 / 459
页数:3
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共 6 条
[1]   ELECTRON ORBITAL ENERGIES OF OXYGEN ADSORBED ON SILICON SURFACES AND OF SILICON DIOXIDE [J].
IBACH, H ;
ROWE, JE .
PHYSICAL REVIEW B, 1974, 10 (02) :710-718
[2]   ELECTRONIC-TRANSITIONS OF OXYGEN ADSORBED ON CLEAN SILICON (111) AND (100) SURFACES [J].
IBACH, H ;
ROWE, JE .
PHYSICAL REVIEW B, 1974, 9 (04) :1951-1957
[3]   OXIDATION OF CLEAN GE AND SI SURFACES [J].
LUDEKE, R ;
KOMA, A .
PHYSICAL REVIEW LETTERS, 1975, 34 (18) :1170-1173
[4]  
NISHIJIMA M, UNPUBLISHED
[5]   SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA [J].
ROWE, JE ;
IBACH, H .
PHYSICAL REVIEW LETTERS, 1973, 31 (02) :102-105
[6]   SURFACE PLASMA OSCILLATIONS OF A DEGENERATE ELECTRON GAS [J].
STERN, EA ;
FERRELL, RA .
PHYSICAL REVIEW, 1960, 120 (01) :130-136