CRITICAL CONCENTRATION OF HOT CARRIERS IN A QUASI-2-DIMENSIONAL SEMICONDUCTOR

被引：6

作者：

FERRY, DK ^{[1
]}

机构：

[1] USN,OFF NAVAL RES,ARLINGTON,VA 22217

来源：

关键词：

D O I：

10.1016/0375-9601(77)90831-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：243 / 244

页数：2

共 9 条

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[2] CARRIER GF, 1966, FUNCTIONS COMPLEX VA, P249
[3] FERRY DK, IN PRESS
[4] ON THE THEORY OF DIELECTRIC BREAKDOWN IN SOLIDS
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[6] INTER-CARRIER ENERGY EXCHANGE AND CRITICAL CONCENTRATION OF HOT CARRIERS IN A SEMICONDUCTOR
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[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 86 (552P): : 881 - &
[7] HOT CARRIERS IN SILICON SURFACE INVERSION LAYERS
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SAH, CT
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) : 1254 - 1257
[8] WARM AND HOT CARRIERS IN SILICON SURFACE-INVERSION LAYERS
HESS, K
SAH, CT
[J]. PHYSICAL REVIEW B, 1974, 10 (08) : 3375 - 3386
[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT
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[J]. PHYSICAL REVIEW, 1967, 163 (03): : 816 - &