LOW-TEMPERATURE STUDIES OF SEMICONDUCTOR SURFACES

被引:18
作者
GRAZHULIS, VA
机构
[1] Institute of Solid State Physics, Academy of Sciences of the U.S.S.R., 142432, Chernogolovka, Moscow
关键词
D O I
10.1016/0079-6816(91)90015-V
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The review of the published results on low-temperature behaviour (T = 1.4-100K) of semiconductor surfaces is presented. Special attention is paid to the surface atomic structures, formation of the surface conducting channels, band bendings, and Schottky barriers. The effects of low temperatures on the properties of clean and metal-adsorbed surfaces are summarized and discussed. Some new approaches to the interpretation of the observed low-T phenomenon are presented. A comparison with the room temperature data in some cases is also performed. It is shown that the low-T experiments disclose new features of clean and metal-adsorbed surfaces and thus make strong contribution to the development of the physics of semiconductor surfaces.
引用
收藏
页码:89 / 175
页数:87
相关论文
共 241 条
[161]   THE INTERACTION OF SI WITH AL(111) SURFACES ABOVE ROOM-TEMPERATURE [J].
MUNOZ, MC ;
SORIA, F ;
SACEDON, JL .
SURFACE SCIENCE, 1987, 189 :204-210
[162]  
NEPAVEKAR A, 1980, SURF SCI, V96, P207
[163]   ATOM VIBRATIONS ON CLEAN AND DOPED (111) SILICON SURFACE AND ON CLEAN (110) GAAS SURFACE [J].
NESTERENKO, BA ;
SNITKO, OV ;
BORODKIN, AD .
SURFACE SCIENCE, 1972, 32 (03) :576-+
[164]  
NESTERENKO BA, 1983, PHYZICHESKIYE SVOIST
[165]   ELECTRICAL STUDY OF SCHOTTKY BARRIERS ON ATOMICALLY CLEAN GAAS(110) SURFACES [J].
NEWMAN, N ;
VANSCHILFGAARDE, M ;
KENDELWICZ, T ;
WILLIAMS, MD ;
SPICER, WE .
PHYSICAL REVIEW B, 1986, 33 (02) :1146-1159
[166]   SURFACE-STATES ON SI(111) SQUARE-ROOT3 X SQUARE-ROOT3-IN - EXPERIMENT AND THEORY [J].
NICHOLLS, JM ;
MARTENSSON, P ;
HANSSON, GV ;
NORTHRUP, JE .
PHYSICAL REVIEW B, 1985, 32 (02) :1333-1335
[167]   PSEUDOPOTENTIAL TOTAL ENERGY CALCULATIONS FOR SI(111)-(1X1) AND SI(111)-(2X1) [J].
NORTHRUP, JE ;
COHEN, ML .
PHYSICA B & C, 1983, 117 (MAR) :774-776
[168]   SI(111) SQUARE-ROOT 3 X SQUARE-ROOT 3-AL - AN ADATOM-INDUCED RECONSTRUCTION [J].
NORTHRUP, JE .
PHYSICAL REVIEW LETTERS, 1984, 53 (07) :683-686
[169]   ATOMIC GEOMETRY AND SURFACE-STATE SPECTRUM FOR GE(111)-(2 X 1) [J].
NORTHRUP, JE ;
COHEN, ML .
PHYSICAL REVIEW B, 1983, 27 (10) :6553-6556
[170]   POLARIZATION DEPENDENCE OF GE(111)2X1 SURFACE-STATE ABSORPTION USING PHOTOTHERMAL DISPLACEMENT SPECTROSCOPY - A TEST OF SURFACE RECONSTRUCTION MODELS [J].
OLMSTEAD, MA ;
AMER, NM .
PHYSICAL REVIEW B, 1984, 29 (12) :7048-7050