MATERIALS FOR OPTOELECTRONIC AND PHOTONIC INTEGRATED-CIRCUITS

[1] GAAS-MESFETS FABRICATED ON INP SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 289 - 290

[2] LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1320 - 1321

[3] Choi H. K., 1987, Optoelectronics - Devices and Technologies, V2, P265

[4] INTEGRATED EXTERNAL CAVITY LASER [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1227 - 1229

[5] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1659 - 1660

[6] GAAS OPTOELECTRONIC INTEGRATED RECEIVER WITH HIGH-OUTPUT FAST-RESPONSE CHARACTERISTICS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 39 - 41

[7] LOW-LEAKAGE INGAAS PHOTODIODES GROWN ON GAAS SUBSTRATES USING A GRADED STRAINED-LAYER SUPERLATTICE [J]. ELECTRONICS LETTERS, 1987, 23 (06) : 273 - 275

[8] LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) : 1073 - 1077

[9] MONOLITHIC INTEGRATION OF INGAAS P-I-N PHOTODETECTOR WITH FULLY ION-IMPLANTED INP JFET AMPLIFIER [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 447 - 449

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25

[1] GAAS-MESFETS FABRICATED ON INP SUBSTRATES [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 289 - 290

[2] LOW-THRESHOLD (APPROXIMATELY-600 A/CM2 AT ROOM-TEMPERATURE) GAAS/AIGAAS LASERS ON SI (100) [J]. APPLIED PHYSICS LETTERS, 1987, 51 (17) : 1320 - 1321

[3] Choi H. K., 1987, Optoelectronics - Devices and Technologies, V2, P265

[4] INTEGRATED EXTERNAL CAVITY LASER [J]. APPLIED PHYSICS LETTERS, 1986, 49 (19) : 1227 - 1229

[5] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (24) : 1659 - 1660

[6] GAAS OPTOELECTRONIC INTEGRATED RECEIVER WITH HIGH-OUTPUT FAST-RESPONSE CHARACTERISTICS [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 39 - 41

[7] LOW-LEAKAGE INGAAS PHOTODIODES GROWN ON GAAS SUBSTRATES USING A GRADED STRAINED-LAYER SUPERLATTICE [J]. ELECTRONICS LETTERS, 1987, 23 (06) : 273 - 275

[8] LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) : 1073 - 1077

[9] MONOLITHIC INTEGRATION OF INGAAS P-I-N PHOTODETECTOR WITH FULLY ION-IMPLANTED INP JFET AMPLIFIER [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (09) : 447 - 449

[10] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 13 - 25