HIGH ASPECT RATIO 0.1 MU-M TUNGSTEN GATES FOR INGAAS/INAIAS HETEROJUNCTION TRANSISTORS

[1] FABRICATION OF ULTRAHIGH RESOLUTION STRUCTURES IN COMPOUND SEMICONDUCTOR HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 326 - 327

[2] Chen Y. K., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P431, DOI 10.1109/IEDM.1987.191450

[3] GATE-LENGTH DEPENDENCE OF DC AND MICROWAVE PROPERTIES OF SUBMICROMETER IN0.53GA0.47AS HIGFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) : 70 - 72

[4] CURRENT-GAIN CUTOFF FREQUENCY COMPARISON OF INGAAS HEMTS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 241 - 243

[5] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 592 - 594

[6] Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P180, DOI 10.1109/IEDM.1988.32784

[7] ELECTRON-BEAM FABRICATION OF HIGH-PERFORMANCE INGAAS/INAIAS HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS WITH SUB-MICRON REFRACTORY AIRBRIDGE GATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1820 - 1823

[1] FABRICATION OF ULTRAHIGH RESOLUTION STRUCTURES IN COMPOUND SEMICONDUCTOR HETEROSTRUCTURES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (01): : 326 - 327

[2] Chen Y. K., 1987, 1987 International Electron Devices Meeting, IEDM. Technical Digeset (Cat. No.87CH2515-5), P431, DOI 10.1109/IEDM.1987.191450

[3] GATE-LENGTH DEPENDENCE OF DC AND MICROWAVE PROPERTIES OF SUBMICROMETER IN0.53GA0.47AS HIGFETS [J]. IEEE ELECTRON DEVICE LETTERS, 1989, 10 (02) : 70 - 72

[4] CURRENT-GAIN CUTOFF FREQUENCY COMPARISON OF INGAAS HEMTS [J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (05) : 241 - 243

[5] 400-A LINEWIDTH E-BEAM LITHOGRAPHY ON THICK SILICON SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1980, 36 (07) : 592 - 594

[6] Mishra U. K., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P180, DOI 10.1109/IEDM.1988.32784

[7] ELECTRON-BEAM FABRICATION OF HIGH-PERFORMANCE INGAAS/INAIAS HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS WITH SUB-MICRON REFRACTORY AIRBRIDGE GATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06): : 1820 - 1823