ELECTRON-BEAM FABRICATION OF HIGH-PERFORMANCE INGAAS/INAIAS HETEROJUNCTION INSULATED GATE FIELD-EFFECT TRANSISTORS WITH SUB-MICRON REFRACTORY AIRBRIDGE GATES

被引：3

作者：

TENNANT, DM

SHUNK, SC

FEUER, MD

KUO, JM

TELL, B

BEHRINGER, RE

CHANG, TY

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 06期

关键词：

D O I：

10.1116/1.584160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1820 / 1823

页数：4

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