NOVEL TECHNIQUE FOR SI EPITAXIAL LATERAL OVERGROWTH - TUNNEL EPITAXY

被引：15

作者：

OGURA, A

FUJIMOTO, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 21期

关键词：

D O I：

10.1063/1.102061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2205 / 2207

页数：3

共 8 条

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[6]

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[7]

OGURA A, 1989, MAT RES S C, V138, P361

[8] LATERAL EPITAXIAL OVERGROWTH OF SILICON ON SIO2 [J].

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