INTERFACE ROUGHNESS OF GAAS/ALAS SUPERLATTICES MBE-GROWN ON VICINAL SURFACES

被引：7

作者：

AUVRAY, P

POUDOULEC, A

BAUDET, M

GUENAIS, B

REGRENY, A

DANTERROCHES, C

MASSIES, J

机构：

[1] CTR NATL ETUD TELECOMMUN,F-38240 MEYLAN,FRANCE

[2] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1991年 / 50卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(91)90147-C

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interface morphology of GaAs/AlAs superlattices grown by molecular beam epitaxy on misoriented (001) GaAs substrates has been investigated using X-ray diffraction techniques in addition to high-resolution transmission electron microscopy (HRTEM). We observe that the width and intensity of the satellite peaks are very sensitive to the step-edge orientation. Among the investigated ones ([110BAR], [100], [110]), it is the [110BAR] step-edge direction which is the most favourable to a regular growth of superlattice structures. Structural models based on HRTEM observations (step distribution at interfaces and local fluctuation of layer thicknesses) have been constructed, allowing an explanation of the X-ray diagrams.

引用

页码：109 / 114

页数：6

共 6 条

[1] X-RAY-DIFFRACTION EFFECTS IN GA AND AL ARSENIDE STRUCTURES MBE-GROWN ON SLIGHTLY MISORIENTED GAAS (001) SUBSTRATES [J].