INVESTIGATION OF HIGH-QUANTUM EFFICIENCY INGAAS/INP AND INGAAS/GAAS QUANTUM DOTS

被引：7

作者：

SCHMIDT, A ^{[1
]}

FORCHEL, A ^{[1
]}

STRAKA, J ^{[1
]}

GYURO, I ^{[1
]}

SPEIER, P ^{[1
]}

ZIELINSKI, E ^{[1
]}

机构：

[1] SEL ALCATEL RES CTR,STUTTGART,GERMANY

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.585983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using selective wet-chemical etching of the top barrier material of a quantum well, we have fabricated effectively buried quantum dots in the material systems InGaAs/InP and InGaAs/GaAs. The patterning is carried out on InGaAs quantum well samples masked by a high-resolution negative e-beam resist which is used as etch mask. A lateral potential well is formed due to the change of the energy barrier between the original quantum well and the surface quantum well regions. The photoluminescence shows a high efficiency as well as a shift of the luminescence signal to higher energy as the structure size is decreased. For InGaAs/InP single quantum well samples the emission of the open surface quantum well is detected. The emission of the lateral barrier regions is blue-shifted by about 24 meV compared to an unetched reference.

引用

页码：2896 / 2899

页数：4

共 9 条

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